An electroforming-free mechanism for Cu2O solid-electrolyte-based conductive-bridge random access memory (CBRAM)
Author:
Affiliation:
1. Department of Electronics and Computer Engineering
2. Hanyang University
3. Seoul
4. Republic of Korea
5. Department of Nano-Scale Semiconductor Engineering
6. Seoul 133-791
Abstract
In a CuxO solid-electrolyte-based CBRAM cell using an Ag top electrode, electroforming-free and electro-reset processes could be achieved at a specific ex situ annealing temperature of the solid electrolyte.
Funder
Korea Evaluation Institute of Industrial Technology
Publisher
Royal Society of Chemistry (RSC)
Subject
Materials Chemistry,General Chemistry
Link
http://pubs.rsc.org/en/content/articlepdf/2020/TC/D0TC01325K
Reference72 articles.
1. An 8 Mb Multi-Layered Cross-Point ReRAM Macro With 443 MB/s Write Throughput
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