In-plane plasmon coupling in topological insulator Bi2Se3 thin films-Reference-Cited by-同舟云学术

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In-plane plasmon coupling in topological insulator Bi2Se3 thin films

Published:2021-11-15 Issue:20 Volume:119 Page:201103
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Nasir Saadia¹^ORCID,Wang Zhengtianye²^ORCID,Mambakkam Sivakumar V.²^ORCID,Law Stephanie¹²^ORCID

Affiliation:

1. Department of Physics and Astronomy, University of Delaware, 217 Sharp Lab, 204 The Green, Newark, Delaware 19716, USA

2. Department of Materials Science and Engineering, University of Delaware, 201 DuPont Hall, 127 The Green, Newark, Delaware 19716, USA

Funder

Basic Energy Sciences

Division of Materials Research

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

https://aip.scitation.org/doi/am-pdf/10.1063/5.0071895

Reference34 articles.

1. Analytical Approach to the Surface Plasmon Resonance Characteristic of Metal Nanoparticle Dimer in Dipole-Dipole Approximation

2. On the Universal Scaling Behavior of the Distance Decay of Plasmon Coupling in Metal Nanoparticle Pairs: A Plasmon Ruler Equation

3. Optical properties of two interacting gold nanoparticles

4. Strongly Interacting Plasmon Nanoparticle Pairs: From Dipole−Dipole Interaction to Conductively Coupled Regime

5. On the Use of Plasmonic Nanoparticle Pairs As a Plasmon Ruler: The Dependence of the Near-Field Dipole Plasmon Coupling on Nanoparticle Size and Shape

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Optical conductivity of a Bi₂Se₃ topological insulator with a THz transparent top gate;Nanophotonics;2024-02-05

2. Near-field spectroscopy of Dirac plasmons in Bi2Se3 ribbon arrays;APL Photonics;2023-05-01

3. Epitaxial growth of atomically thin Ga2Se2 films on c-plane sapphire substrates;Journal of Vacuum Science & Technology A;2023-04-27

4. Growth of ultrathin Bi₂Se₃ films by molecular beam epitaxy;Journal of Vacuum Science & Technology A;2023-01

5. Bi₂Se₃ Growth on (001) GaAs Substrates for Terahertz Integrated Systems;ACS Applied Materials & Interfaces;2022-09-08

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