Boron as an anti-surfactant in sublimation growth of AlN single crystals
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2202639
Reference14 articles.
1. UV-Specific (320-365 nm) Digital Camera Based On a 128×128 Focal Plane Array of GaN/AlGaN p-i-n Photodiodes
2. Bulk AlN crystal growth: self-seeding and seeding on 6H-SiC substrates
3. Seeded growth of AlN bulk single crystals by sublimation
4. Morphology and X-Ray Diffraction Peak Widths of Aluminum Nitride Single Crystals Prepared by the Sublimation Method
5. Growth of high purity AlN crystals
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1. Bi as an antisurfactant in heteroepitaxial growth of Co/Au(111) multilayers;Solid State Communications;2021-03
2. Favourable growth conditions for the preparation of bulk AlN single crystals by PVT;CrystEngComm;2020
3. Physical vapor transport growth of bulk Al1−xScxN single crystals;Journal of Crystal Growth;2018-10
4. Studies on high temperature vapor phase epitaxy of GaN;Journal of Crystal Growth;2017-06
5. Effect of the Ammonia Flow on the Formation of Microstructure Defects in GaN Layers Grown by High-Temperature Vapor Phase Epitaxy;Journal of Electronic Materials;2016-12-19
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