Studies on high temperature vapor phase epitaxy of GaN-Reference-Cited by-同舟云学术

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Studies on high temperature vapor phase epitaxy of GaN

Published:2017-06 Issue: Volume:468 Page:212-215
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Schneider T.,Lukin G.,Zimmermann F.,Barchuk M.,Niederschlag E.,Pätzold O.,Stelter M.

Funder

European Union

Saxonian Government

German Research Foundation

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference15 articles.

1. Properties of GaN grown at high rates on sapphire and on 6H–SiC;Fischer;Appl. Phys. Lett.,1996

2. Growth of GaN crystals from chlorine-free gas phase;Siche;J. Cryst. Growth,2008

3. The role of carbon in transport processes during PVT growth of bulk GaN;Rost;Phys. Status Solidi C,2009

4. Investigation of GaN layers grown by high temperature vapor phase epitaxy;Lukin;Phys. Status Solidi C,2014

5. Vapor pressures of inorganic substances IX. Gallium;Speiser;J. Am. Chem. Soc.,1953

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Recent progress of high temperature vapor phase epitaxy for the growth of GaN layers – Controlled coalescence of nucleation layers;Journal of Crystal Growth;2020-03

2. Hydride vapor phase epitaxy for gallium nitride substrate;Journal of Semiconductors;2019-10-01

3. Heteroepitaxial growth of GaN on sapphire substrates by high temperature vapor phase epitaxy;Journal of Crystal Growth;2019-10

4. Defect-rich GaN interlayer facilitating the annihilation of threading dislocations in polar GaN crystals grown on (0001)-oriented sapphire substrates;Journal of Applied Physics;2019-08-28

5. Growth of Bulk GaN from Gas Phase;Crystal Research and Technology;2018-03-12

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