Magnetoresistance in Co∕Pt based magnetic tunnel junctions with out-of-plane magnetization
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2838282
Reference19 articles.
1. Magnetic tunnel junction device with perpendicular magnetization films for high-density magnetic random access memory
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3. MTJ Elements With MgO Barrier Using RE-TM Amorphous Layers for Perpendicular MRAM
4. Magnetoresistance behavior of a magnetic tunnel junction with perpendicularly magnetized Co∕Pd multilayers
5. Crossover from in-plane to perpendicular anisotropy in Pt/CoFe/AlOx sandwiches as a function of Al oxidation: A very accurate control of the oxidation of tunnel barriers
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3. Magnetic tunnel junctions with perpendicular easy axis at junction diameter of less than 20 nm;Japanese Journal of Applied Physics;2017-07-24
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