Comparison of the interfacial structure between MgO and Al–O oxidation layers for perpendicular magnetic tunnel junction
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2176163
Reference10 articles.
1. Composite media for perpendicular magnetic recording
2. 230% room-temperature magnetoresistance in CoFeB∕MgO∕CoFeB magnetic tunnel junctions
3. Bias voltage effect on tunnel magnetoresistance in fully epitaxial MgO double-barrier magnetic tunnel junctions
4. Local Transport Property on Ferromagnetic Tunnel Junction Measured Using Conducting Atomic Force Microscope
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4. Sizable room-temperature magnetoresistance in cobalt based magnetic tunnel junctions with out-of-plane anisotropy;Applied Physics Letters;2008-03-10
5. Electrodeposition of perpendicular Gdx(FeCo)y magnetic thin film from ZnCl2–DMSO2 electrolyte;Journal of Magnetism and Magnetic Materials;2007-03
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