First principles study of hBN-AlN short-period superlattice heterostructures
Author:
Affiliation:
1. Sandia National Laboratories, Livermore, California 94551, USA
2. Sandia National Laboratories, Albuquerque, New Mexico 87123, USA
Funder
Sandia National Laboratories
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5052140
Reference34 articles.
1. AlGaN Deep-Ultraviolet Light-Emitting Diodes with External Quantum Efficiency above 10%
2. Boron nitride: A new photonic material
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4. Band-edge transitions in hexagonal boron nitride epilayers
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4. Investigation of intersubband phonon-polariton transitions in hBN/GaN heterostructure;Physics and Simulation of Optoelectronic Devices XXVIII;2020-03-02
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