Epitaxial Growth of GaN/AlN on <i>h</i>-BN/Si(111) by Metal–Organic Chemical Vapor Deposition: An Interface Analysis-Reference-Cited by-同舟云学术

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Epitaxial Growth of GaN/AlN on h-BN/Si(111) by Metal–Organic Chemical Vapor Deposition: An Interface Analysis

Published:2023-01-03 Issue:1 Volume:5 Page:146-154
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Ravi Loganathan¹^ORCID,Rather Muzafar Ahmad¹^ORCID,Lin Kun-Lin²,Wu Chien-Ting²^ORCID,Yu Tung-Yuan²,Lai Kun-Yu³^ORCID,Chyi Jen-Inn¹

Affiliation:

1. Department of Electrical Engineering, National Central University, Taoyuan32001, Taiwan R.O.C

2. Taiwan Semiconductor Research Institute, Hsinchu30078, Taiwan R.O.C

3. Department of Optics and Photonics, National Central University, Taoyuan32001, Taiwan R.O.C

Funder

Epistar Corporation

Ministry of Science and Technology, Taiwan

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.2c01078

Reference42 articles.

1. III–nitrides: Growth, characterization, and properties

2. The Roles of Structural Imperfections in InGaN-Based Blue Light-Emitting Diodes and Laser Diodes

3. Ultraviolet AlGaN multiple-quantum-well laser diodes

4. Growth and applications of Group III-nitrides

5. AlGaN/GaN polarization-doped field-effect transistor for microwave power applications

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Wafer level quasi-van der Waals epitaxy of AlGaN/GaN heterojunctions on sp2-bonded BN controlled by AlN nucleation layer;Applied Surface Science;2024-06

2. High performance few-layered h-BN-based MIS blocks by Fowler-Nordheim tunneling for infrared photodetection;Infrared Physics & Technology;2024-03

3. Growing of perfect single-crystal epitaxial films of (Si 2 ) 1-x (GaN) x solid solutions on Si (111) substrates from the liquid phase;2023-11-15

4. Scaling up of Growth, Fabrication, and Device Transfer Process for GaN‐based LEDs on H‐BN Templates to 6‐inch Sapphire Substrates;Advanced Materials Technologies;2023-07-20

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