Verification of threading dislocations density estimation methods suitable for efficient structural characterization of AlxGa1−xN/GaN heterostructures grown by MOVPE-Reference-Cited by-同舟云学术

Verification of threading dislocations density estimation methods suitable for efficient structural characterization of AlxGa1−xN/GaN heterostructures grown by MOVPE

Published:2019-10-28 Issue:16 Volume:126 Page:165304
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Moszak K.¹^ORCID,Olszewski W.¹^ORCID,Pucicki D.¹²^ORCID,Serafińczuk J.¹²^ORCID,Opołczyńska K.¹³^ORCID,Rudziński M.⁴,Kudrawiec R.¹⁵^ORCID,Hommel D.¹³^ORCID

Affiliation:

1. Łukasiewicz Research Network—PORT Polish Center for Technology Development, Stabłowicka 147, 54-066 Wrocław, Poland

2. Faculty of Microsystem Electronics and Photonics, Wrocław University of Science and Technology, Janiszewskiego 11/17, 50-372 Wrocław, Poland

3. Faculty of Physics, University of Wrocław, Plac Maxa Borna 9, 50-204 Wrocław, Poland

4. Łukasiewicz Research Network—Institute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warsaw, Poland

5. Faculty of Fundamental Problems of Technology, Wrocław University of Science and Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland

Funder

Fundacja na rzecz Nauki Polskiej

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5100140

Reference18 articles.

1. Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors

2. Impact of Point Defects on the Luminescence Properties of (Al,Ga)N

3. Improved characteristics of InGaN multiple-quantum-well laser diodes grown on laterally epitaxially overgrown GaN on sapphire

4. Growth optimization and optical properties of AlGaNAs alloys

5. 1-eV solar cells with GaInNAs active layer

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