Electrostatic effects of interface states on carrier transport in semiconductor heterojunctions
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.326194
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1. High Doping Density/High Electric Field, Stress and Heterojunction Effects on the Characteristics of CMOS Compatible p-n Junctions;Journal of The Electrochemical Society;2011
2. Band offsets and transport mechanisms of hydrogenated nanocrystalline silicon/crystalline silicon heterojunction diode: Key properties for device applications;Journal of Applied Physics;2007-09-15
3. The I-V characteristics of nano-silicon/crystal silicon hetero-junction;Acta Physica Sinica;2003
4. Capacitance–voltage characteristic of anisotype heterojunction in the presence of interface states and series resistance;Applied Surface Science;2001-02
5. The DC characteristics of anisotype heterojunction in the presence of interface states and series resistance;Applied Surface Science;1999-04
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