Current/voltage characteristics of p-n Ge-Si and Ge-GaAs heterojunctions-Reference-Cited by-同舟云学术

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Current/voltage characteristics of p-n Ge-Si and Ge-GaAs heterojunctions

Published:1966 Issue:9 Volume:113 Page:1468
ISSN:0020-3270
Container-title:Proceedings of the Institution of Electrical Engineers
language:en
Short-container-title:Proc. Inst. Electr. Eng. UK

Author:

Donnelly J.P.,Milnes A.G.

Publisher

Institution of Engineering and Technology (IET)

Subject

General Engineering,General Medicine

Link

https://digital-library.theiet.org/content/journals/10.1049/piee.1966.0246?crawler=true&mimetype=application/pdf

Reference22 articles.

1. Van Ruyven, L.J.: ‘Germanium-gallium phosphide heterojunctions’, September, 1964, Thesis, Technische Hogeschool Te Eindhoven, Netherlands

2. Donnelly, J.P.: ‘Studies of Ge-GaAs and Ge-Si heterojunctions’, September, 1965, Ph.D. Thesis, Carnegie Institute of Technology, Pittsburgh, Pa.

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