Epitaxial growth of CoSi2 film by Co/a-Si/Ti/Si(100) multilayer solid state reaction
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1341213
Reference39 articles.
1. Growth of epitaxial CoSi2on (100)Si
2. Formation of epitaxial CoSi2films on (001) silicon using Ti‐Co alloy and bimetal source materials
3. Epitaxial growth of CoSi2on both (111) and (100) Si substrates by multistep annealing of a ternary Co/Ti/Si system
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1. Xenon-ion-induced and thermal mixing of Co/Si bilayers and their interplay;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2011-05
2. Two routes to polycrystalline CoSi2 thin films by co-sputtering Co and Si;Applied Surface Science;2010-09
3. Schottky barrier height lowering induced by CoSi2 nanostructure;Applied Physics A;2009-12-15
4. Latent heats of fusion and crystallization behaviors of Co–Si binary alloys;Journal of Alloys and Compounds;2009-11
5. Growth mechanism of epitaxial CoSi2 on Si and reactive deposition epitaxy of double heteroepitaxial Si/CoSi2/Si;Thin Solid Films;2008-04
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