Metallic contamination in hydrogen plasma immersion ion implantation of silicon
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1404422
Reference17 articles.
1. A new methodology to produce accurate empirical models for VLSI MOSFETs
2. Hydrogen induced silicon surface layer cleavage
3. Ion-cut silicon-on-insulator fabrication with plasma immersion ion implantation
4. Plasma source ion‐implantation technique for surface modification of materials
Cited by 9 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Overview of Wafer Contamination and Defectivity;Handbook of Silicon Wafer Cleaning Technology;2018
2. Plasma Immersion Ion Implantation Into Inner Surface of Cylindrical Bore Using Moving Auxiliary Electrode;IEEE Transactions on Plasma Science;2011-11
3. Numerical simulation of plasma immersion ion implantation for cubic target with finite length using three-dimensional particle-in-cell model;Acta Physica Sinica;2011
4. Overview of Wafer Contamination and Defectivity;Handbook of Silicon Wafer Cleaning Technology;2008
5. Influence of thickness and dielectric properties on implantation efficacy in plasma immersion ion implantation of insulators;Journal of Applied Physics;2004-04
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