Metal-organic chemical vapor deposition growth of InGaN/GaN high power green light emitting diode: Effects of InGaN well protection and electron reservoir layer-Reference-Cited by-同舟云学术

Metal-organic chemical vapor deposition growth of InGaN/GaN high power green light emitting diode: Effects of InGaN well protection and electron reservoir layer

Published:2007-09 Issue:5 Volume:102 Page:053519
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Ju Jin-Woo,Kang Eun-Sil,Kim Hwa-Soo,Jang Lee-Woon,Ahn Haeng-Keun,Jeon Ju-Won,Leea In-Hwan,Baek Jong Hyeob

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2776218

Reference21 articles.

1. InGaN/GaN/AlGaN-Based Laser Diodes with Modulation-Doped Strained-Layer Superlattices

2. The Blue Laser Diode

3. InGaN-Based Multi-Quantum-Well-Structure Laser Diodes

4. Compositional dependence of phase separation in InGaN layers

5. In-rich In1−xGaxN films by metalorganic vapor phase epitaxy

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