Fabrication of normally-off GaN nanowire gate-all-around FET with top-down approach-Reference-Cited by-同舟云学术

Fabrication of normally-off GaN nanowire gate-all-around FET with top-down approach

Published:2016-10-03 Issue:14 Volume:109 Page:143106
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Im Ki-Sik¹²,Won Chul-Ho¹,Vodapally Sindhuri¹,Caulmilone Raphaël³,Cristoloveanu Sorin⁴,Kim Yong-Tae⁵,Lee Jung-Hee¹

Affiliation:

1. School of Electronics Engineering, Kyungpook National University, Daegu 702-701, South Korea

2. Institute of Semiconductor Fusion Technology, Kyungpook National University, Daegu 702-701, South Korea

3. SOITEC, Bernin 38190, France

4. Institute of Microelectronics, Electromagnetism and Photonics, Grenoble Polytechnic Institute, Minatec, Grenoble 38016, France

5. Korea Institute of Science and Technology, Seoul 02792, South Korea

Funder

National Research Foundation of Korea (NRF)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4964268

Reference36 articles.

1. Multigate transistors as the future of classical metal–oxide–semiconductor field-effect transistors

2. Nanometre-scale electronics with III–V compound semiconductors

3. Size-Dependent-Transport Study of $\hbox{In}_{0.53} \hbox{Ga}_{0.47}\hbox{As}$ Gate-All-Around Nanowire MOSFETs: Impact of Quantum Confinement and Volume Inversion

4. Fabrication and Device Characterization of Omega-Shaped-Gate ZnO Nanowire Field-Effect Transistors

5. J. P. Colinge , M. H. Gao , A. Romano-Rodriguez , H. Maes , and C. Claeys , in Technical Digest—International Electron Devices Meeting (1990), p. 595.

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