Structures and defects in arsenic-ion-implanted GaAs films annealed at high temperatures
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.365327
Reference50 articles.
1. Anomalous Hall-effect results in low-temperature molecular-beam-epitaxial GaAs: Hopping in a denseEL2-like band
2. Carrier lifetime versus anneal in low temperature growth GaAs
3. Defects in low‐temperature‐grown GaAs annealed at 800 °C
4. Formation of arsenic precipitates in GaAs buffer layers grown by molecular beam epitaxy at low substrate temperatures
5. Arsenic precipitates and the semi‐insulating properties of GaAs buffer layers grown by low‐temperature molecular beam epitaxy
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Gap-Dependent Terahertz Pulses from Mid-Size-Gap Multi-Energy Arsenic-Ion-Implanted GaAs Antennas;Japanese Journal of Applied Physics;2008-11-14
2. Carrier dynamics in ion-implanted GaAs studied by simulation and observation of terahertz emission;Physical Review B;2004-12
3. A comparative study of the Ostwald ripening of As precipitates in LT-MBE grown and in As implanted GaAs;2000 International Semiconducting and Insulating Materials Conference. SIMC-XI (Cat. No.00CH37046)
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