Thermal stability of irradiation-induced point defects in cubic silicon carbide
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3245397
Reference52 articles.
1. Demonstration of an SiC neutron detector for high-radiation environments
2. Blue LEDs, UV photodiodes and high-temperature rectifiers in 6H-SiC
3. Silicon carbide MEMS for harsh environments
4. Current state-of-the-art and future prospects for power semiconductor devices in power transmission and distribution applications
5. A 600V Deep-Implanted Gate Vertical JFET
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