Dielectric functions of CVD–grown boron nitride from 1.1 to 9.0 eV by spectroscopic ellipsometry
Author:
Affiliation:
1. National Institute of Advanced Industrial Science and Technology (AIST), AIST-NU GaN Advanced Device Open Innovation Laboratory (GaN-OIL) Nagoya, 464-8601, Japan
2. SCIOCS Co., Ltd., Hitachi, Ibaraki 319-1418, Japan
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
https://aip.scitation.org/doi/pdf/10.1063/5.0038679
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1. Boron nitride substrates for high-quality graphene electronics
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