Reduction in Residual Impurities in Chemical Vapor Deposition–Grown Hexagonal Boron Nitride Thin Films-Reference-Cited by-同舟云学术

Reduction in Residual Impurities in Chemical Vapor Deposition–Grown Hexagonal Boron Nitride Thin Films

Published:2023-01-04 Issue: Volume: Page:2200352
ISSN:0370-1972
Container-title:physica status solidi (b)
language:en
Short-container-title:Physica Status Solidi (b)

Author:

Yamada Hisashi¹²^ORCID

Affiliation:

1. Electronics and Photonics Research Institute National Institute of Advanced Industrial Science and Technology (AIST) 1-1-1 Umezono Tsukuba 305-8568 Japan

2. AIST-NU GaN Advanced Device Open Innovation Laboratory (GaN-OIL) National Institute of Advanced Industrial Science and Technology (AIST) Nagoya 464-8601 Japan

Funder

Japan Society for the Promotion of Science London

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssb.202200352

Reference50 articles.

1. Direct-bandgap properties and evidence for ultraviolet lasing of hexagonal boron nitride single crystal

2. Synthesis of high-purity boron nitride single crystals under high pressure by using Ba–BN solvent

3. Boron nitride substrates for high-quality graphene electronics

4. Preparation and Properties of Boron Nitride Films by Metal Organic Chemical Vapor Deposition

5. Ultraviolet luminescence from hexagonal boron nitride heteroepitaxial layers on Ni(111) grown by flow-rate modulation epitaxy

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