Heat treatment of semi‐insulating chromium‐doped gallium arsenide substrates with converted surface removed prior to molecular beam expitaxial growth
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.93874
Reference5 articles.
1. ∼1.40 eV emission band in GaAs
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4. Manganese incorporation behavior in molecular beam epitaxial gallium arsenide
5. Impurity redistribution during epitaxial growth
Cited by 14 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Molecular Beam Epitaxy of High-Quality GaAs and AlGaAs;Molecular Beam Epitaxy;1995
2. Molecular beam epitaxial growth of GaAs and other compound semiconductors;Thin Solid Films;1991-12
3. Diffusion mechanism of chromium in GaAs;Journal of Applied Physics;1991-11
4. Mechanism of Cr Diffusion in GaAs;MRS Proceedings;1991
5. SEM and EMPA analysis of impurities related to GaAs substrates and MBE grown GaAs layers;Vacuum;1988-01
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