∼1.40 eV emission band in GaAs
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_19820003?crawler=true&mimetype=application/pdf
Reference9 articles.
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Chapter 1 III-V Compounds;Semiconductors and Semimetals;1988
2. Existence of ≂64‐meV deep acceptor in Se‐implanted GaAs after close‐contact annealing;Journal of Applied Physics;1984-05-15
3. Chapter 4 Models for Mid-Gap Centers in Gallium Arsenide;Semiconductors and Semimetals;1984
4. Heat treatment of semi‐insulating chromium‐doped gallium arsenide substrates with converted surface removed prior to molecular beam expitaxial growth;Applied Physics Letters;1983-01-15
5. Electrical and photoluminescence properties of Ge-doped n-type GaAs Grown by molecular beam epitaxy;Journal of Electronic Materials;1983-01
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