Influence of a space charge region on charge carrier kinetics in silicon wafers
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1473214
Reference12 articles.
1. Silicon nitride for the improvement of silicon inversion layer solar cells
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4. Plasma Si nitride—A promising dielectric to achieve high‐quality silicon MIS/IL solar cells
5. Properties of inversion layers for MIS/IL solar cells studied on low-temperature-processed MNOS transistors
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2. Evaluation of the Bulk Lifetime of Silicon Wafers by Immersion in Hydrofluoric Acid and Illumination;ECS Journal of Solid State Science and Technology;2012
3. The influence of the silicon/silicon oxide space charge region on excess charge carrier kinetics in silicon;physica status solidi (b);2010-11-09
4. The determination of charge-carrier lifetime in silicon;physica status solidi (b);2008-09
5. A Model for the Steady-State Photoconductance of an Abrupt p-n Junction Semiconductor Diode Assuming Flat Quasi-Fermi Levels;IEEE Transactions on Electron Devices;2007-02
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