Stability of beryllium‐doped compositionally graded and abrupt AlInAs/GaInAs heterojunction bipolar transistors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.109708
Reference10 articles.
1. Be redistribution during growth of GaAs and AlGaAs by molecular beam epitaxy
2. Stress Effect on Current-Induced Degradation of Be-Doped AlGaAs/GaAs Heterojunction Bipolar Transistors
3. Recombination‐enhanced impurity diffusion in Be‐doped GaAs
4. High-reliability GaAs-AlGaAs HBTs by MBE with Be base doping and InGaAs emitter contacts
5. Carbon-Doped-Base AlGaAs/GaAs HBTs Grown by Gas-Source Molecular Beam Epitaxy Using Only Gaseous Sources
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1. Effect of emitter design on the dc characteristics of InP-based double-heterojunction bipolar transistors;Semiconductor Science and Technology;2001-02-15
2. Failure mechanisms in compound semiconductor electron devices;Handbook of Advanced Electronic and Photonic Materials and Devices;2001
3. Be diffusion in InGaAs/InP heterojunction bipolar transistors;IEEE Electron Device Letters;2000-07
4. Heavily carbon-doped In[sub 0.53]Ga[sub 0.47]As on InP (001) substrate grown by solid source molecular beam epitaxy;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1999
5. Chemical Limit to Semiconductor Device Miniaturization;Electrochemical and Solid-State Letters;1999
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