Investigation of formation mechanism of Li-P dual-acceptor doped p-type ZnO
Author:
Affiliation:
1. Hybrid Nanodevice Research Group, Electrical Engineering, Indian Institute of Technology Indore, Indore 453552, India
2. Raja Ramanna Center for Advanced Technology, Indore 452013, India
Funder
Ministry of Electronics and Information technology (Meity)
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5001071
Reference31 articles.
1. Origin ofp-type doping difficulty in ZnO: The impurity perspective
2. Possiblep-type doping with group-I elements in ZnO
3. Control of p- and n-type conductivities in Li-doped ZnO thin films
4. Realization of p-type ZnO thin films via phosphorus doping and thermal activation of the dopant
5. Defect properties andp-type doping efficiency in phosphorus-doped ZnO
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