Decay of zone-center phonons in GaN with A1, E1, and E2 symmetries
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2561930
Reference27 articles.
1. Separation of hot-electron and self-heating effects in two-dimensional AlGaN/GaN-based conducting channels
2. Self-heating study of an AlGaN∕GaN-based heterostructure field-effect transistor using ultraviolet micro-Raman scattering
3. Electrothermal simulation of the self-heating effects in GaN-based field-effect transistors
4. Energy relaxation by hot two-dimensional carriers in zero magnetic field
5. Phonon lifetimes in bulk AlN and their temperature dependence
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1. Raman investigation of lattice anharmonicity and substrate-induced effects in AlN heteroepilayers;Ceramics International;2023-05
2. Reduction of in-plane and cross-plane thermal conductivities by polarization electric field induced in InxGa1-xN/GaN superlattice;Journal of Alloys and Compounds;2022-03
3. Feasibility of resonant Raman cooling and radiation balanced lasing in semiconductors;Journal of the Optical Society of America B;2021-12-20
4. Thermal conductivity reduction by interfacial electric field of GaN/InGaN/GaN superlattice;Materials Science and Engineering: B;2021-11
5. Reduction of thermal conductivity due to interfacial polarization mechanism of GaN/InxGa1-xN superlattice;Physica E: Low-dimensional Systems and Nanostructures;2021-10
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