Phonon limited anisotropic quantum transport in phosphorene field effect transistors-Reference-Cited by-同舟云学术

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Phonon limited anisotropic quantum transport in phosphorene field effect transistors

Published:2019-09-21 Issue:11 Volume:126 Page:114502
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Brahma Madhuchhanda¹²^ORCID,Kabiraj Arnab²^ORCID,Bescond Marc³^ORCID,Mahapatra Santanu²^ORCID

Affiliation:

1. Centre for Nanoscience and Engineering, Indian Institute of Science, Bangalore 560012, India

2. Nanoscale Device Research Laboratory, Department of Electronic Systems Engineering, Indian Institute of Science, Bangalore 560012, India

3. LIMMS, CNRS-UMI 2820, Institute of Industrial Science, University of Tokyo, 153-8505 Tokyo, Japan

Funder

Science and Engineering Research Board

Council of Scientific and Industrial Research, India

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5109057

Reference43 articles.

1. Integrated Circuits and Logic Operations Based on Single-Layer MoS2

2. MoS 2 transistors with 1-nanometer gate lengths

3. High-Performance Single Layered WSe2 p-FETs with Chemically Doped Contacts

4. Black phosphorus field-effect transistors

5. Phosphorene: An Unexplored 2D Semiconductor with a High Hole Mobility

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Exploring performance characteristics via edge configuration in black phosphorene TFETs;International Journal of Modern Physics B;2024-09-05

2. Effect of the magnetic field on the conductance and spin polarization in phosphorene superlattice;Physica B: Condensed Matter;2024-07

3. Electron–phonon interaction-driven dynamic conductivity in monolayer phosphorene with broken inversion symmetry;Journal of Applied Physics;2024-06-27

4. High-throughput design of functional-engineered MXene transistors with low-resistive contacts;npj Computational Materials;2022-09-21

5. Transport and performance study of double-walled black phosphorus nanotube transistors;Semiconductor Science and Technology;2022-06-17

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