Tapered GaAs quantum wells and selectively contactable two‐dimensional electron gases grown by shadow masked molecular‐beam epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.358594
Reference14 articles.
1. Growth of three‐dimensional dielectric waveguides for integrated optics by molecular‐beam‐epitaxy method
2. Taper couplers for GaAs−AlxGa1−xAs waveguide layers produced by liquid phase and molecular beam epitaxy
3. Recent developments in molecular beam epitaxy (MBE)
4. A cantilever shadow mask technique for reduced area molecular beam epitaxial growth
5. High contrast electro‐opticn‐i‐p‐idoping superlattice modulator
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1. Surface diffusion during shadow-mask-assisted molecular-beam epitaxy of III-V compounds;Journal of Applied Physics;2005-07
2. Molecular beam epitaxy of compound materials through shadow masks;Physical Review B;2004-10-29
3. Vertically tapered epilayers for low-loss waveguide-fiber coupling achieved in a single epitaxial growth run;Journal of Lightwave Technology;2003-01
4. Shadow mask technology;Thin Solid Films;2002-06
5. Local probe techniques for luminescence studies of low-dimensional semiconductor structures;Journal of Applied Physics;1998-08-15
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