Molecular beam epitaxy of compound materials through shadow masks
Author:
Publisher
American Physical Society (APS)
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.70.155328/fulltext
Reference29 articles.
1. Selective area growth of GaAs/AlxGa1−xAs multilayer structures with molecular beam epitaxy using Si shadow masks
2. Growth of GaAs‐Ga1−xAlxAs over preferentially etched channels by molecular beam epitaxy: A technique for two‐dimensional thin‐film definition
3. Monolithic integration of multiple wavelength vertical‐cavity surface‐emitting lasers by mask molecular beam epitaxy
4. Micromachined, reusable shadow mask for integrated optical elements grown by metalorganic chemical vapor deposition
5. Patterned three-color ZnCdSe/ZnCdMgSe quantum-well structures for integrated full-color and white light emitters
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1. Shadow Wall Epitaxy of Compound Semiconductors toward All in Situ Fabrication of Quantum Devices;ACS Applied Electronic Materials;2024-08-19
2. Resistless nanofabrication by stencil lithography: A review;Microelectronic Engineering;2015-01
3. A portable molecular beam epitaxy system for in situ x-ray investigations at synchrotron beamlines;Review of Scientific Instruments;2012-10
4. Surface diffusion during shadow-mask-assisted molecular-beam epitaxy of III-V compounds;Journal of Applied Physics;2005-07
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