Origin and suppression of misfit dislocations in heavily boron‐doped (100) silicon wafers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.111424
Reference13 articles.
1. Ethylene Diamine-Pyrocatechol-Water Mixture Shows Etching Anomaly in Boron-Doped Silicon
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3. Bonding of silicon wafers for silicon‐on‐insulator
4. Fabrication of novel three-dimensional microstructures by the anisotropic etching of
5. Micromechanical accelerometer integrated with MOS detection circuitry
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1. Misfit Dislocation Nucleation Study in p/p[sup +] Silicon;Journal of The Electrochemical Society;2001
2. Misfit dislocation formation in p/p+ silicon vapor-phase epitaxy;Journal of Crystal Growth;2000-02
3. The quality of 200 mm diameter epitaxial Si wafers for advanced CMOS technology monitored using synchrotron X-ray topography;Microelectronic Engineering;1999-02
4. Formation of Shallow Junctions during Rapid Thermal Processing from Electron‐Beam Deposited Boron Sources;Journal of The Electrochemical Society;1996-09-01
5. Extraction of Elastic Parameters of Heavily Boron-Doped Silicon Layer by Elimination of Misfit Dislocations;MRS Proceedings;1995
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