Ternary TiAlGe ohmic contacts for p-type 4H-SiC
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1643772
Reference14 articles.
1. Large‐band‐gap SiC, III‐V nitride, and II‐VI ZnSe‐based semiconductor device technologies
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4. Advances in SiC materials and devices: an industrial point of view
5. Ohmic Contacts for Compound Semiconductors
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1. Metal Contact on P-Type 4H-SiC With Low Specific Contact Resistance and Micrometer-Scale Contact Area;IEEE Electron Device Letters;2023-09
2. Effect of SiC crystal orientation on Ti3SiC2formation between SiC and Al/Ti bi-layered film;Ceramics International;2021-03
3. A critical review of theory and progress in Ohmic contacts to p-type SiC;Journal of Crystal Growth;2020-02
4. Thermal stability study of n-type and p-type ohmic contacts simultaneously formed on 4H-SiC;Journal of Alloys and Compounds;2018-01
5. Recent Progress in Ohmic Contacts to Silicon Carbide for High-Temperature Applications;Journal of Electronic Materials;2015-11-03
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