Experimental demonstration of electrical spin injection into semiconductor employing conventional three-terminal and non-local Hanle devices using spin gapless semiconductor as ferromagnetic injector

Abstract

Here, the deposition of a polycrystalline thin film of a noble promising alloy Ti2CoSi (TCS) on a p-Si substrate has been reported, and its spin gapless semiconducting characteristics have been investigated experimentally. The structural, magnetic, and electronic transport features of the TCS film have been investigated in detail followed by its implementation as a ferromagnetic tunnel contact for proficient spin accumulation into a semiconductor employing both conventional three-terminal and non-local (NL) Hanle measurements. As we can avoid noticing erroneous effects like anisotropic magnetoresistance of the ferromagnetic electrodes, the NL-Hanle experiment has been established to be the most effective method for demonstrating true spin transport in semiconductors.