Controlling the electronic and magnetic properties of <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" altimg="si108.svg" display="inline" id="d1e1401"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Mn</mml:mi></mml:mrow><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub><mml:mi mathvariant="normal">CoAl</mml:mi></mml:mrow></mml:math> by <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" altimg="si8.svg" display="inline" id="d1e1414"><mml:mi>d</mml:mi></mml:math> metal doping: A DFT study-Reference-Cited by-同舟云学术

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Controlling the electronic and magnetic properties of Mn2CoAl by d metal doping: A DFT study

Published:2024-05 Issue: Volume:188 Page:111914
ISSN:0022-3697
Container-title:Journal of Physics and Chemistry of Solids
language:en
Short-container-title:Journal of Physics and Chemistry of Solids

Author:

M. Karunakaran^ORCID,Ravi Desigan,Bandyopadhyay Payel,Banerjee Rudra^ORCID

Publisher

Elsevier BV

Reference53 articles.

1. Proposal for a new class of materials: spin gapless semiconductors;Wang;Phys. Rev. Lett.,2008

2. Half-metallic ferromagnets, spin gapless semiconductors, and topological semimetals based on Heusler alloys: theory and experiment;Marchenkov;Phys. Met. Metallogr.,2021

3. Making nonmagnetic semiconductors ferromagnetic;Ohno;Science,1998

4. First-principles design of spintronics materials;Li;Natl. Sci. Rev.,2016

5. Experimental demonstration of electrical spin injection into semiconductor employing conventional three-terminal and non-local hanle devices using spin gapless semiconductor as ferromagnetic injector;Maji;Appl. Phys. Lett.,2023

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