X-ray photoelectron spectroscopy characterization of AlGaN surfaces exposed to air and treated in NH4OH solution
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.126504
Reference13 articles.
1. High electron mobility transistor based on a GaN‐AlxGa1−xN heterojunction
2. DC and microwave performance of high-current AlGaN/GaN heterostructure field effect transistors grown on p-type SiC substrates
3. High Al-content AlGaN/GaN MODFETs for ultrahigh performance
4. High power RF operation of AlGaN/GaN HEMTs grown on insulating silicon carbide substrates
5. Self-heating in high-power AlGaN-GaN HFETs
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