Effect of doping on room temperature carrier escape mechanisms in InAs/GaAs quantum dot p-i-n junction photovoltaic cells
Author:
Affiliation:
1. Department of Materials Science and Engineering, University of Delaware, Newark, Delaware 19716, USA
2. NanoPower Research Laboratory, Rochester Institute of Technology, Rochester, New York 14623, USA
Funder
National Science Foundation (NSF)
Oak Ridge National Laboratory (ORNL)
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/am-pdf/10.1063/1.4948954
Reference29 articles.
1. Detailed Balance Limit of Efficiency of p‐n Junction Solar Cells
2. Improving solar cell efficiencies by up-conversion of sub-band-gap light
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4. Intermediate band solar cells: Recent progress and future directions
5. Production of Photocurrent due to Intermediate-to-Conduction-Band Transitions: A Demonstration of a Key Operating Principle of the Intermediate-Band Solar Cell
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1. Strain relaxation in InAs quantum dots through capping layer variation and its impact on the ultrafast carrier dynamics;Semiconductor Science and Technology;2019-08-27
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4. High saturation intensity in InAs/GaAs quantum dot solar cells and impact on the realization of the intermediate band concept at room-temperature;Applied Physics Letters;2017-02-06
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