Characteristics of the metal insulator semiconductor structure:AlN/Si
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.92129
Reference7 articles.
1. Epitaxially grown AlN and its optical band gap
2. Optical properties of aluminium nitride prepared by chemical and plasmachemical vapour deposition
3. Chemical and plasmachemical vapour deposition of aluminium nitride layers
4. The Use of Metalorganics in the Preparation of Semiconductor Materials
5. Epitaxial growth and piezoelectric properties of A1N, GaN, and GaAs on sapphire or spinel
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1. Atomic Layer Densification of AlN Passivation Layer on Epitaxial Ge for Enhancement of Reliability and Electrical Performance of High-K Gate Stacks;ACS Applied Electronic Materials;2020-03-24
2. Impact of In Situ Annealing on the Deep Levels in Ni‐Au/AlN/Si Metal–Insulator–Semiconductor Capacitors;physica status solidi (a);2019-07-24
3. Substrate Effects in GaN-on-Silicon RF Device Technology;International Journal of High Speed Electronics and Systems;2019-03
4. Suppression of GeOx interfacial layer and enhancement of the electrical performance of the high-K gate stack by the atomic-layer-deposited AlN buffer layer on Ge metal-oxide-semiconductor devices;RSC Advances;2019
5. Temperature dependent electrical properties of AlN/Si heterojunction;Journal of Applied Physics;2018-11-28
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