Characterization of electronic states in molecular beam epitaxy grown GaN by optical admittance spectroscopy: Comparison of different nitrogen plasma sources-Reference-Cited by-同舟云学术

Characterization of electronic states in molecular beam epitaxy grown GaN by optical admittance spectroscopy: Comparison of different nitrogen plasma sources

Published:1999-04-05 Issue:14 Volume:74 Page:2032-2034
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Krtschil A.,Witte H.,Lisker M.,Christen J.,Birkle U.,Einfeldt S.,Hommel D.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.123747

Reference18 articles.

1. Emerging gallium nitride based devices

2. Dynamical study of the yellow luminescence band in GaN

3. Deep levels and persistent photoconductivity in GaN thin films

4. Deep level defects in n‐type GaN compensated with Mg

5. Optical Admittance Spectroscopy of Deep Centers in Galliumnitride - Correlation with Photoluminescence

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