Experimental study and modeling of reverse-bias dark currents in PIN structures using amorphous and polymorphous silicon
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1624482
Reference19 articles.
1. a-Si:H photodiode technology for advanced CMOS active pixel sensor imagers
2. Thermal generation currents in hydrogenated amorphous siliconp‐i‐nstructures
3. Origins of reverse bias leakage currents in hydrogenated amorphous siliconp‐i‐ndetector structures
4. Using reverse bias currents to differentiate between bulk degradation and interfacial degradation in hydrogenated amorphous siliconp‐i‐nstructures
5. Very low densities of localized states at the Fermi level in hydrogenated polymorphous silicon from capacitance and space-charge-limited current measurements
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2. Carrier transport and sensitivity issues in heterojunction with intrinsic thin layer solar cells on N-type crystalline silicon: A computer simulation study;Journal of Applied Physics;2010-03
3. Modeling of transient and steady-state dark current in amorphous silicon p–i–n photodiodes;Current Applied Physics;2009-11
4. The role of bulk and interface states on performance of a-Si : H p-i-n solar cells using reverse current–voltage technique;Journal of Physics D: Applied Physics;2009-06-29
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