Electron beam modification of GaAs surface potential: Measurement of Richardson constant
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.354798
Reference13 articles.
1. Irradiation-induced defects in GaAs
2. Total dose and transient radiation effects on GaAs MMICs
3. In situ Hall‐effect system for real‐time electron‐irradiation studies
4. Surface and interface free‐carrier depletion in GaAs molecular beam epitaxial layers: Demonstration of high interface charge
5. Effects of a buffer layer on free-carrier depletion in n-type GaAs
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Electron irradiation during Schottky gate metal evaporation and its effect on the stability of InGaAs/AlGaAs HEMTs;Solid-State Electronics;1997-10
2. Shift in Threshold Voltage and Schottky Barrier Height of Molybdenum Gate Gallium Arsenide Field Effect Transistors after High Forward Gate Current Test;Japanese Journal of Applied Physics;1996-07-15
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