Single-mode 1.27μm InGaAs vertical cavity surface-emitting lasers with temperature-tolerant modulation characteristics-Reference-Cited by-同舟云学术

Single-mode 1.27μm InGaAs vertical cavity surface-emitting lasers with temperature-tolerant modulation characteristics

Published:2005-05-23 Issue:21 Volume:86 Page:211109
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Chacinski Marek,Schatz Richard,Kjebon Olle,Hammar Mattias,von Würtemberg Rickard Marcks,Mogg Sebastian,Sundgren Petrus,Berggren Jesper

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1935755

Reference7 articles.

1. M F. Mederer, I. Ecker, R. Michalzik, G. Steinle, H. Riechert, K. J. Ebeling, B. Lunitz, J. Moisel, and D. Wiedernmann, Proceedings of the 2002 Electronic Components and Technology Conference, San Diego, CA, (2002) pp.5–11.

2. 1300-nm GaAs-based vertical-cavity lasers

3. High-performance 1.3 [micro sign]m InGaAs vertical cavity surface emitting lasers

4. Temperature sensitivity of the threshold current of long-wavelength InGaAs-GaAs VCSELs with large gain-cavity detuning

5. High-performance 1.06-μm selectively oxidized vertical-cavity surface-emitting lasers with InGaAs-GaAsP strain-compensated quantum wells

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Dynamic properties of electrically p–n confined, epitaxially regrown 1.27 µm InGaAs single-mode vertical-cavity surface-emitting lasers;IET Optoelectronics;2009-06-01

2. Gallium arsenide second-window quantum dot VCSEL;physica status solidi (c);2006-03

3. Temperature insensitive 1.3 [micro sign]m InGaAs∕GaAs quantum dot distributed feedback lasers for 10 Gbit∕s transmission over 21 km;Electronics Letters;2006