High-performance 1.3 [micro sign]m InGaAs vertical cavity surface emitting lasers-Reference-Cited by-同舟云学术

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High-performance 1.3 [micro sign]m InGaAs vertical cavity surface emitting lasers

Published:2003 Issue:15 Volume:39 Page:1128
ISSN:0013-5194
Container-title:Electronics Letters
language:en
Short-container-title:Electron. Lett.

Author:

Sundgren P.,Marcks von Würtemberg R.,Berggren J.,Hammar M.,Ghisoni M.,Oscarsson V.,Ödling E.,Malmquist J.

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Link

https://digital-library.theiet.org/content/journals/10.1049/el_20030733?crawler=true&mimetype=application/pdf

Reference11 articles.

1. OC-48 capable InGaAsN vertical cavity lasers

2. Data transmission up to 10 Gbit/s with 1.3 [micro sign]m wavelength InGaAsN VCSELs

3. Electrically pumped 10 Gbit∕s MOVPE-grown monolithic 1.3 μm VCSEL with GaInNAs active region

4. 1.3 [micro sign]m InGaAsN vertical cavity surface emitting lasers grown by MOCVD

5. MOVPE-grown GaInNAs VCSELs at 1.3 [micro sign]m with conventional mirror design approach

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1. Effects of Growth Temperature and Rapid Thermal Annealing on Luminescence Properties of Ingaas/Gaas Multiple Quantum Wells;SSRN Electronic Journal;2022

2. Fundamental transverse mode operation of a type‐II vertical‐external‐cavity surface‐emitting laser at 1.2 µm;Electronics Letters;2017-01

3. High-Speed InP-Based Long-Wavelength VCSELs;Green Photonics and Electronics;2017

4. Origin and enhancement of the 1.3 μm luminescence from GaAs treated by ion-implantation and flash lamp annealing;Journal of Applied Physics;2013-09-07

5. High optical sensitivity to ambient conditions of uncapped InGaAs surface quantum dots;Applied Physics Letters;2012-03-26

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