Substitutional carbon incorporation in epitaxial Si1−yCy alloys on Si(001) grown by molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.123384
Reference9 articles.
1. Growth and properties of strained Si1-x-yGexCylayers
2. Substitutional versus interstitial carbon incorporation during pseudomorphic growth of Si1−yCyon Si(001)
3. Carbon incorporation in Si1−yCy alloys grown by molecular beam epitaxy using a single silicon–graphite source
4. Growth conditions for complete substitutional carbon incorporation into Si1−yCy layers grown by molecular beam epitaxy
5. Substitutional carbon incorporation in epitaxial Si1−yCy layers grown by chemical vapor deposition
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