Assessment of the normalization procedure used for interlaboratory comparisons of positron beam measurements
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.370735
Reference15 articles.
1. Interaction of positron beams with surfaces, thin films, and interfaces
2. Characterization of defects in Si and SiO2−Si using positrons
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4. Determination of the characteristic signal for positron annihilation at divacancies in ion-irradiated silicon
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1. Positron Annihilation Studies of Materials;Characterization of Materials;2012-10-12
2. The evolution of vacancy-type defects in silicon-on-insulator structures studied by positron annihilation spectroscopy;Journal of Applied Physics;2011-07
3. Interlaboratory comparison of positron annihilation lifetime measurements for synthetic fused silica and polycarbonate;Journal of Applied Physics;2008-07-15
4. Positron Annihilation Studies of Vacancy Defects in Crystalline and Amorphous Si;Defect and Diffusion Forum;2001-11
5. Charge states of divacancies in self-implanted doped Si;Journal of Applied Physics;2001-06
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