Near‐band gap absorption and photoluminescence of In0.53Ga0.47As semiconductor alloy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.328728
Reference9 articles.
1. Small area InGaAs/InP p-i-n photodiodes: fabrication, characteristics and performance of devices in 274 Mb/s and 45 Mb/s lightwave receivers at 1.31 μm wavelength
2. Liquid phase epitaxial growth and characterization of high purity lattice matched GaxIn1-xAs ON <111>B InP
3. Intensity of Optical Absorption by Excitons
4. Hot‐carrier relaxation in photoexcited In0.53Ga0.47As
5. LPE Growth of Misfit Dislocation‐Free Thick In1 − x Ga x As Layers on InP
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1. Analysis of InGaAs/InP p-I-n Photodiode Failed by Electrostatic Discharge;Journal of Electronic Materials;2023-05-24
2. High-quality Si-implanted In0.53Ga0.47As epitaxial layers and their application to n+p junction devices;Journal of Applied Physics;2000-04
3. Effect of interface roughness and well width on differential reflection dynamics in InGaAs/InP quantum wells;Applied Physics Letters;1998-01-05
4. Large activation of praseodymium in In0.53Ga0.47As;Semiconductor Science and Technology;1993-05-01
5. Copper-related defects inIn0.53Ga0.47As grown by liquid-phase epitaxy;Physical Review B;1993-01-15
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