Hot‐carrier relaxation in photoexcited In0.53Ga0.47As
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.91736
Reference7 articles.
1. Hot electrons and phonons under high intensity photoexcitation of semiconductors
2. Compositional dependence of the electron mobility in Inl-x Gax Asy P1-y
3. Background carrier concentration and electron mobility in LPE In1−xGaxAsyP1−ylayers
4. Velocity‐field characteristics of Ga1−xInxP1−yAsyquaternary alloys
5. Liquid phase epitaxial In1−xGaxAsyP1−ylattice matched to 〈100〉 InP over the complete wavelength range 0.92⩽λ⩽1.65 μm
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2. Experimental Results;Characterization of Terahertz Emission from High Resistivity Fe-doped Bulk Ga0.69In0.31As Based Photoconducting Antennas;2011
3. Energy loss rate of two-dimensional electron gas in GaInAs/AlInAs, InSb/AlInSb and GaSb/AlGaAsSb heterostructures;Physica E: Low-dimensional Systems and Nanostructures;2003-06
4. Optical propeties of In 1-x GaxAs y P 1-y multiple quantum well heterostructure lasers;SPIE Proceedings;2000-12-15
5. The Effects of Spacer Thickness and Temperature on the Transport Properties of Modulation-Doped In0.53Ga0.47As/In0.52Al0.48As Heterojunctions;physica status solidi (a);2000-12
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