Thermal diffusion of tin in GaAs from a spin‐on SnO2/SiO2source
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.91714
Reference3 articles.
1. Gallium Arsenide Planar Technology
2. Diffusion of Tin into GaAs from Doped SiO[sub 2] Film Sources
3. Tin Diffusion into GaAs from Doped SiO2Films
Cited by 16 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Characterization of P- and N-Type Impurity Diffusions in GaAs from Doped Silica Films;Japanese Journal of Applied Physics;1995-02-28
2. Open-tube diffusion in GaAs using zinc- and tin-doped spin-on silica films;Control of Semiconductor Interfaces;1994
3. Diffusion of Te or Zn into GaAs from Doped SiO2 Films by Rapid Thermal Processing;MRS Proceedings;1988
4. Fabrication and characteristics of tin-doped n-layers into gallium arsenide by an open-tube diffusion process;Solid-State Electronics;1987-07
5. Pulsed ruby laser diffusion of tin into GaAs;IEE Proceedings I Solid State and Electron Devices;1987
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