Tin Diffusion into GaAs from Doped SiO2Films
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://stacks.iop.org/1347-4065/14/i=5/a=717/pdf
Cited by 12 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. References;Thin Films by Chemical Vapour Deposition;1990
2. Fabrication and characteristics of tin-doped n-layers into gallium arsenide by an open-tube diffusion process;Solid-State Electronics;1987-07
3. Investigation of Se-doped GaAs epilayers grown by low-pressure metal-organic chemical vapor deposition;Journal of Physics and Chemistry of Solids;1986-01
4. Diffusion in III-V semiconductors from spin-on-film sources;Journal of Physics D: Applied Physics;1984-03-14
5. Chapter 7 CW Beam Processing of Gallium Arsenide;Semiconductors and Semimetals;1984
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