Phonon bottleneck in GaAs/AlxGa1−xAs quantum dots
Author:
Affiliation:
1. Department of Physics, Lancaster University, Lancaster, LA1 4YB, UK
Funder
Engineering and Physical Sciences Research Council (EPSRC)
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://scitation.aip.org/deliver/fulltext/aip/journal/adva/5/6/1.4922950.pdf?itemId=/content/aip/journal/adva/5/6/10.1063/1.4922950&mimeType=pdf&containerItemId=content/aip/journal/adva
Reference31 articles.
1. The Physics of Low-dimensional Semiconductors
2. Intrinsic mechanism for the poor luminescence properties of quantum-box systems
3. Observation of Phonon Bottleneck in Quantum Dot Electronic Relaxation
4. Energy relaxation by multiphonon processes in InAs/GaAs quantum dots
5. Effect of spectral broadening and electron‐hole scattering on carrier relaxation in GaAs quantum dots
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1. Probing the bandstructure dependent figures of merit in InAs/GaAs quantum dot photodetectors;Micro and Nanostructures;2022-08
2. Control of complex quantum structures in droplet epitaxy;Semiconductor Science and Technology;2019-08-12
3. Observation of enhanced hot phonon bottleneck effect in 2D perovskites;Applied Physics Letters;2018-04-02
4. Suppression of phonon-mediated hot carrier relaxation in type-II InAs/AlAs x Sb1 − x quantum wells: a practical route to hot carrier solar cells;Progress in Photovoltaics: Research and Applications;2016-02-26
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