High‐resistivity (>105Ω cm) InP layers by liquid phase epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.94350
Reference8 articles.
1. Diffusion, solubility, and electrical activity of Co and Fe in InP
2. Very-high-purity InP l.p.e. layers
3. LPE growth of high purity InP and In1−xGaxP1−yAsy
4. High purity LPE InP
5. High purity InP and InGaAsP grown by liquid phase epitaxy
Cited by 13 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Growth and Properties of Semi‐Insulating InP Using Multi‐Frit Trichloride Vapor Phase Epitaxy (MTVPE);Journal of The Electrochemical Society;1991-09-01
2. Can liquid-phase epitaxy still be useful for optoelectronic devices?;Materials Science and Engineering: B;1991-07
3. Phase equilibria in the system InCoP at 450 °C;Materials Science and Engineering: B;1991-05
4. Semi-Insulating InP Grown by MOCVD;MRS Proceedings;1991
5. Method for reliable liquid phase epitaxial growth of semi-insulating InP doped with Ti and Zn;Journal of Crystal Growth;1990-04
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