Author:
Feng M. S.,Wu C. C.,Lin K. C.,Chan S. H.,Chen C. Y.
Abstract
ABSTRACTFe (C5H5)2 and Fe (CO)5 were used as the 3d transition metal dopants in semi-insulating InP epitaxial layer grown by MOCVD. From the bright and dark field images of the TEM analysis, many precipitates were observed. Three extra peaks of the X-ray diffraction were found. The peaks of free-exciton recombination, donor-acceptor transition and the recombination of bound exciton with phonon emission were observed in the short wavelength range. Two Fe related peaks was observed at 0.7079 eV and 0.6897 eV. For a wide range (10–600) of In/Fe mole fraction, the resistivity keeps at high values (about 108 Ω -cm) and appears the highest resistivity of 5 × 108 Ω -cm for 1 μ m layer.
Publisher
Springer Science and Business Media LLC