High‐speed and high‐power 1.3‐μm InGaAsP buried crescent injection lasers with semi‐insulating current blocking layers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.98521
Reference11 articles.
1. Semi‐insulator‐embedded InGaAsP/InP flat‐surface buried heterostructure laser
2. InGaAsP laser with semi‐insulating current confining layers
3. Channelled-substrate buried-heterostructure InGaAsP/InP laser with semi-insulating OMVPE base structure and LPE regrowth
4. Planar surface buried-heterostructure InGaAsP/InP lasers with hydride VPE-grown Fe-doped highly resistive current-blocking layers
5. Wide-bandwidth and high-power 1.3μm InGaAsP buried crescent lasers with semi-insulating Fe-doped InP current blocking layers
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1. Selective-proton-bombarded buried stripe laser and its modulation response;SPIE Proceedings;2000-03-29
2. High-Speed and High-Power 1.3 µm InGaAsP/InP Selective Proton-Bombarded Buried Crescent Lasers with Optical Field Attenuation Regions;Japanese Journal of Applied Physics;1999-12-15
3. The properties of MOVPE grown 1.3 μm DFB MQW lasers infilled with semi-insulating InP fabricated on semi-insulating substrates;Journal of Electronic Materials;1995-11
4. High-frequency GaInAsP/InP laser mesas in (-110) direction with thick semi-insulating InP:Fe;IEEE Photonics Technology Letters;1993-10
5. High‐speed 1.3‐μm InGaAsP buried crescent lasers with Fe‐doped InP current blocking layers grown by organometallic vapor phase epitaxy using tertiarybutylphosphine;Journal of Applied Physics;1992-01-15
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